| 摘要 |
A method for reducing/eliminating plasma damage in semiconductor wafer (100) processing is introduced. The method is applicable to most semiconductor processes that involves the use of plasma, and does not affect process results other than reducing antenna damage. After exposing the wafer (100) to plasma excited gases (108), a cooling/idle step is added to allow the plasma to discharge prior to removing the wafer (100) from the process chamber (104).
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