发明名称 Silicon oxide co-deposition/etching process
摘要 Methods of providing silicon oxide on a substrate in a single process step by simultaneously introducing both a silicon source gas and an etch gas into a CVD chamber. As a result, the method will typically involve simultaneous deposition and etching of the silicon oxide. The method is particularly useful for providing silicon oxide spacers with faceted surfaces.
申请公布号 US2003162346(A1) 申请公布日期 2003.08.28
申请号 US20030378429 申请日期 2003.03.03
申请人 MICRON TECHNOLOGY, INC. 发明人 SRINIVASAN ANAND
分类号 C23C16/40;C23C16/44;H01L21/311;H01L21/316;H01L21/8234;H01L21/8238;H01L21/8242;H01L27/108;(IPC1-7):H01L21/823 主分类号 C23C16/40
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