发明名称 |
COMPOSITION FOR FORMING ANTI-REFLECTION COATING |
摘要 |
A composition for forming an anti-reflection coating usable in a lithography process for manufacturing a semiconductor device, which comprises a polymer compound containing a halogen atom; a method for adjusting the damping coefficient of the anti-reflection coating which comprises changing the content of the halogen atom in the polymer compound; and an anti-reflection coating prepared from the composition. The polymer compound preferably has a halogen atom introduced into the main chain thereof and/or a side chain connected with the main chain. The anti-reflection coating can be used in a lithography process using an irradiation light of F2-excimer laser (wave length: 157 nm), exhibits high effect of preventing the reflection of the light, and does not cause the intermixing with a resist layer. |
申请公布号 |
WO03071357(A1) |
申请公布日期 |
2003.08.28 |
申请号 |
WO2003JP01542 |
申请日期 |
2003.02.14 |
申请人 |
NISSAN CHEMICAL INDUSTRIES, LTD.;SAKAMOTO, RIKIMARU;MIZUSAWA, KEN-ICHI |
发明人 |
SAKAMOTO, RIKIMARU;MIZUSAWA, KEN-ICHI |
分类号 |
G03F7/09 |
主分类号 |
G03F7/09 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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