发明名称 Wafer cleaning method
摘要 A cleaning solution is introduced at a working temperature higher than room temperature into a cleaning chamber after the temperature of the inside of the cleaning chamber has been raised by introducing a fluid having a higher temperature than room temperature into the cleaning chamber, or after the temperature of the cleaning chamber has been raised using a heat source, thereby cleaning a semiconductor wafer set in the cleaning chamber.
申请公布号 US2003159716(A1) 申请公布日期 2003.08.28
申请号 US20020211276 申请日期 2002.08.05
申请人 MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 发明人 NAGAI TOSHIHIKO;TANAKA HIROSHI;YOKOI NAOKI;ASAOKA YASUHIRO;HIGASHI MASAHIKO
分类号 H01L21/304;B08B3/02;B08B5/02;B08B7/00;H01L21/00;(IPC1-7):B08B3/00;B08B7/04 主分类号 H01L21/304
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