发明名称 |
Wafer cleaning method |
摘要 |
A cleaning solution is introduced at a working temperature higher than room temperature into a cleaning chamber after the temperature of the inside of the cleaning chamber has been raised by introducing a fluid having a higher temperature than room temperature into the cleaning chamber, or after the temperature of the cleaning chamber has been raised using a heat source, thereby cleaning a semiconductor wafer set in the cleaning chamber.
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申请公布号 |
US2003159716(A1) |
申请公布日期 |
2003.08.28 |
申请号 |
US20020211276 |
申请日期 |
2002.08.05 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
NAGAI TOSHIHIKO;TANAKA HIROSHI;YOKOI NAOKI;ASAOKA YASUHIRO;HIGASHI MASAHIKO |
分类号 |
H01L21/304;B08B3/02;B08B5/02;B08B7/00;H01L21/00;(IPC1-7):B08B3/00;B08B7/04 |
主分类号 |
H01L21/304 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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