发明名称 |
Apparatus for depositing an insulation layer in a trench |
摘要 |
An apparatus for depositing an insulation layer in a trench. A wafer loader is used to load a wafer having a trench. A first HDP-CVD chamber adjoins the wafer loader, where the first HDP-CVD chamber is used to deposit a first insulation layer in the trench, and the first trench retains an opening. A vapor-etching chamber adjoins the first HDP-CVD chamber. The vapor-etching chamber is used to remove part of the first insulation layer to leave a remaining first insulation layer at the bottom of the trench and expose the sidewall of the trench above the remaining first insulation layer. A second HDP-CVD chamber adjoins the vapor-etching chamber, where the second HDP-CVD chamber fills the trench by depositing a second insulation layer. A wafer unloader adjoins the second HDP-CVD chamber.
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申请公布号 |
US2003159655(A1) |
申请公布日期 |
2003.08.28 |
申请号 |
US20020222931 |
申请日期 |
2002.08.19 |
申请人 |
LIN PING-WEI;KUOH GWO-CHYUAN;CHIANG CHAO SHENG |
发明人 |
LIN PING-WEI;KUOH GWO-CHYUAN;CHIANG CHAO SHENG |
分类号 |
C23C16/04;C23C16/54;C23C16/56;H01L21/316;H01L21/762;(IPC1-7):C23C16/00 |
主分类号 |
C23C16/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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