发明名称 |
Method for the preparation of an epitaxial silicon wafer with intrinsic gettering |
摘要 |
This invention is directed to a novel process for the preparation of a silicon wafer comprising a surface having an epitaxial layer deposited thereon. In one embodiment, an epitaxial layer is deposited onto a surface of a silicon wafer. The wafer is also heated to a temperature of at least about 1175° C. This heat treatment begins either during or after the epitaxial deposition. Following the heat treatment, the heated wafer is cooled for a period of time at a rate of at least about 10° C./sec while (a) the temperature of the wafer is greater than about 1000° C., and (b) the wafer is not in contact with a susceptor. In this process, the epitaxial deposition, heating, and cooling are conducted in the same reactor chamber.
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申请公布号 |
US2003159650(A1) |
申请公布日期 |
2003.08.28 |
申请号 |
US20030394927 |
申请日期 |
2003.03.19 |
申请人 |
MEMC ELECTRONIC MATERIALS, INC. |
发明人 |
YANG CHARLES CHIUN-CHIEH;WATKINS DARRELL D. |
分类号 |
H01L21/205;H01L21/322;H01L21/324;(IPC1-7):C30B1/00;C30B23/00;C30B25/00;C30B28/12;C30B28/14 |
主分类号 |
H01L21/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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