发明名称 |
NONVOLATILE SEMICONDUCTOR MEMORY DEVICE PROGRAMMING SECOND DYNAMIC REFERENCE CELL ACCORDING TO THRESHOLD VALUE OF FIRST DYNAMIC REFERENCE CELL |
摘要 |
In a nonvolatile semiconductor memory device, first and second dynamic reference cells are subjected to a same rewriting operation as performed to a memory cell. An average reference current is obtained from the first and second dynamic reference cells, and is compared with a current of data read from the memory cell so as to judge a level of the read data. In this configuration, the second dynamic reference cell is programmed according to a threshold value of the first dynamic reference cell. |
申请公布号 |
US2003161188(A1) |
申请公布日期 |
2003.08.28 |
申请号 |
US20030356495 |
申请日期 |
2003.02.03 |
申请人 |
FUJITSU LIMITED |
发明人 |
TAKAHASHI SATOSHI;YAMASHITA MINORU |
分类号 |
G11C16/02;G11C7/14;G11C16/04;G11C16/06;G11C16/28;(IPC1-7):G11C7/02;G11C5/00 |
主分类号 |
G11C16/02 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|