SEMICONDUCTOR LIGHT EMITTING DEVICE AND OPTICAL DISK UNIT USING IT

摘要

An AlGaInP laser element (24) and an AlGaAs laser element (26) are disposed so that their respective stripes (28, 30) are parallel to each other. The AlGaInP laser element (24) is disposed on the (011) plane (22b) side of the substrate center line, and the AlGaAs laser element (26) on the (011) plane (22a) side of the substrate center line as viewed from the main emission plane (011) (22c) side of a laser beam. The substrate (22) is an off-substrate, and is tilted from the (011) plane (22a) toward the (011) plane (22b) at an angle (thetaoff) of at least 2 degrees and up to 15 degrees with respect to the (100) plane. The optical axis L1 of the AlGaInP laser element (24) is in parallel to the optical axis L2 of the AlGaAs laser element (26), or approaches the latter at an angle of about 0.5 degrees.