| 发明名称 |
METHOD FOR UTILIZING ROUGH INSULATOR TO ENHANCE METAL-INSULATOR-SEMICONDUCTOR RELIABILITY |
| 摘要 |
A method for utilizing a rough insulator to enhance metal-insulator-semiconductor reliability is provided. The method includes steps of: (a) providing a semiconductor substrate; (b) prebaking the semiconductor substrate under a relatively high vacuum to form a rough surface on the semiconductor substrate; and (c) growing an insulator on the semiconductor substrate to form a rough insulator and increase the metal-insulator-semiconductor reliability when the insulator is applied.
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| 申请公布号 |
US2003162409(A1) |
申请公布日期 |
2003.08.28 |
| 申请号 |
US20020122572 |
申请日期 |
2002.04.15 |
| 申请人 |
NATIONAL TAIWAN UNIVERSITY |
发明人 |
LIU CHEE-WEE;YUAN FON;LIN CHUNG-HSUN |
| 分类号 |
H01L21/28;H01L21/306;H01L21/314;H01L21/316;H01L21/318;H01L29/423;H01L29/49;H01L29/51;(IPC1-7):H01L21/31;H01L21/469 |
主分类号 |
H01L21/28 |
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