| 摘要 |
When producing an exposure mask (10) comprising a mask blank (12) for reflecting a ultra-short ultraviolet ray, an absorption film (14) that covers one surface thereof with a specified pattern, and a buffer film (13) interposed between them, a swing effect and a bulk effect to be produced at an object to which the specified pattern is transferred are specified based on the physical property values of a material forming the absorption film (14) and the buffer film (13) and optical conditions at exposure, and, in consideration of specified swing effect and bulk effect, the forming film thickness of the absorption film (14) is determined so as to minimized variations in pattern line width and/or possibility of pattern position deviation. Accordingly, a proper measure can be taken for minimizing and fining a transferred image even in the case of a reflection-type exposure mask compatible with a ultra-short ultraviolet ray by minimizing a variation in line width after exposure onto a wafer and deviation in pattern position. |
