发明名称 Cold cathode electron source
摘要 The present invention provides a cold cathode electron source and a method for manufacturing the cold cathode electron source. The cold cathode electron source includes a substrate on which are deposited a catalyst metal layer, an insulation layer, and a gate metal layer; a cavity section formed through the catalyst metal layer, the insulation layer, and the gate metal layer; and an emitter realized through a plurality of carbon nanotubes, which are grown from walls of the catalyst metal layer exposed in the cavity section and which have long axes parallel to the substrate. The method includes depositing a catalyst metal layer, an insulation layer, and a gate metal layer on a substrate; forming a cavity section by removing a portion of the gate metal layer, the insulation layer, and the catalyst metal layer using a photolithography process; and forming an emitter by mounting the substrate on a chemical vapor deposition reactor and growing carbon nanotubes in a low temperature atmosphere of 500~800 degrees Celsius (° C.).
申请公布号 US2003160556(A1) 申请公布日期 2003.08.28
申请号 US20020223625 申请日期 2002.08.20
申请人 CHOI YOUNG-CHUL;AHN JI-HOON;RHEE HYEK-BOK;HAN DONG-HEE 发明人 CHOI YOUNG-CHUL;AHN JI-HOON;RHEE HYEK-BOK;HAN DONG-HEE
分类号 H01J1/312;H01J1/304;H01J3/02;H01J9/02;(IPC1-7):H01J1/30;H01J1/00 主分类号 H01J1/312
代理机构 代理人
主权项
地址