发明名称 |
Method of forming different silicide portions on different silicon- containing regions in a semiconductor device |
摘要 |
A method is disclosed in which differing metal layers are sequentially deposited on silicon-containing regions so that the type and thickness of the metal layers may be adapted to specific characteristics of the underlying silicon-containing regions. Subsequently, a heat treatment is performed to convert the metals into metal silicides so as to improve the electrical conductivity of the silicon-containing regions. In this way, silicide portions may be formed that are individually adapted to specific silicon-containing regions so that device performance of individual semiconductor elements or the overall performance of a plurality of semiconductor elements may significantly be improved. Moreover, a semiconductor device is disclosed comprising at least two silicon-containing regions having formed therein differing silicide portions, wherein at least one silicide portion comprises a noble metal.
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申请公布号 |
US2003162389(A1) |
申请公布日期 |
2003.08.28 |
申请号 |
US20020282720 |
申请日期 |
2002.10.29 |
申请人 |
WIECZOREK KARSTEN;HORSTMANN MANFRED;STEPHAN ROLF |
发明人 |
WIECZOREK KARSTEN;HORSTMANN MANFRED;STEPHAN ROLF |
分类号 |
H01L21/28;H01L21/285;H01L21/324;H01L21/336;H01L21/8238;H01L29/49;(IPC1-7):H01L21/44 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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