| 发明名称 |
Emission layer formed by rapid thermal formation process |
| 摘要 |
An emitter has a rapid thermal process (RTP) formed emission layer of SiO2, SiOxNy or combinations thereof. The emission layer formed by rapid thermal processing does not require electroforming to stabilize the film. The RTP grown films are stable and exhibit uniform characteristics from device to device.
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| 申请公布号 |
US2003160228(A1) |
申请公布日期 |
2003.08.28 |
| 申请号 |
US20020085866 |
申请日期 |
2002.02.27 |
| 申请人 |
CHEN ZHIZHANG (JOHN);RAMAMOORTHI SRIRAM |
发明人 |
CHEN ZHIZHANG (JOHN);RAMAMOORTHI SRIRAM |
| 分类号 |
H01J1/312;H01J9/02;(IPC1-7):H01L29/06;H01L29/12 |
主分类号 |
H01J1/312 |
| 代理机构 |
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代理人 |
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| 主权项 |
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