发明名称 |
CATHODIC-ARC FILM DEPOSITION METHOD, PROTECTIVE FILM, AND FILM DEPOSITION SYSTEM |
摘要 |
PROBLEM TO BE SOLVED: To provide a cathodic-arc film deposition method by which a high- toughness carbon film (ta-C film) can be deposited. SOLUTION: This method relates to a cathodic-arc film deposition method where a carbon target 11 is collided by cathode-arc discharge to form a plasma beam B containing carbon ions and a substrate 41 is irradiated with the plasma beam B to deposit a carbon film, and gaseous hydrogen is introduced during film deposition from a gaseous hydrogen feeding device 44 into a film deposition chamber 4. The introduced gaseous hydrogen is excited by the plasma beam B to form hydrogen radicals. The hydrogen radicals are allowed to react with carbon in the ta-C film deposited on the substrate 41 to break the C-C bond. As the result, the internal stress of the ta-C film can be relaxed, and the toughness of the ta-C film can be improved. COPYRIGHT: (C)2003,JPO
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申请公布号 |
JP2003239062(A) |
申请公布日期 |
2003.08.27 |
申请号 |
JP20020038568 |
申请日期 |
2002.02.15 |
申请人 |
SHIMADZU CORP |
发明人 |
AKITA NORITAKA;OGURA SHINICHI |
分类号 |
C23C14/06;C23C14/24;G11B5/31;G11B5/84;(IPC1-7):C23C14/06 |
主分类号 |
C23C14/06 |
代理机构 |
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