发明名称 |
METHOD AND APPARATUS FOR PLASMA PROCESSING |
摘要 |
A temperature-adjusting means is buried in an upper portion of a ring member which surrounds a stage for a semiconductor wafer and has the same height as the stage. The temperature-adjusting means is controlled by the ring-member temperature controller 61, according to a recipe for setting a process condition, in such a manner that temperatures of a surface of the wafer and of an upper surface of the ring member are even, respectively. At that time, a temperature difference between above the wafer and above the upper surface of the ring member is made small, which enables to form a film having a higher uniformity. <IMAGE> |
申请公布号 |
EP1154466(A4) |
申请公布日期 |
2003.08.27 |
申请号 |
EP20000901898 |
申请日期 |
2000.01.26 |
申请人 |
TOKYO ELECTRON LIMITED |
发明人 |
AMANO, HIDEAKI;ISHIZUKA, SHUICHI;KOBAYASHI, TAKASHI;TSUBOI, KYO |
分类号 |
C23C16/458;C23C16/46;C23C16/50;C23C16/511;H01J37/32;H01L21/00 |
主分类号 |
C23C16/458 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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