| 摘要 |
PURPOSE: A method for fabricating a nitride semiconductor substrate is provided to reduce the generation of stress and defect from a boundary between a nitride layer and a mask material by performing repeatedly a pausing operation of a lateral epitaxial overgrowth, a removing operation of the mask material, and a resuming operation of the lateral epitaxial overgrowth. CONSTITUTION: The first nitride semiconductor layer is grown on a hetero substrate. The first mask pattern is deposited on the first nitride semiconductor layer. The second nitride semiconductor is grown on a lateral part of the resultant. A dry etch process for the first mask pattern is performed. The second nitride semiconductor layer(53) is formed by growing the second nitride semiconductor. The second mask pattern is deposited on the second nitride semiconductor layer. The third nitride semiconductor is grown on a lateral part of the resultant. The dry etch process for the second mask pattern is performed. The third nitride semiconductor layer(63) is formed by growing the third nitride semiconductor.
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