| 摘要 |
PURPOSE: A method for cutting a semiconductor wafer is provided to prevent cracks from spreading by forming a guide groove on the edge of the wafer in a direction perpendicular to a cutting groove in a cutting process for separating devices from the wafer including a laser diode. CONSTITUTION: Guide grooves(33) are formed in a portion adjacent to fine cracks(31) scattered on the edge of the semiconductor wafer(30) in which a semiconductor laser diode is completed. The semiconductor wafer is cut in a direction perpendicular to the guide groove. The guide groove has a thickness not greater than 1/3 of the semiconductor wafer.
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