| 摘要 |
A monolithically integrated microwave amplifier device, comprises an input for receiving a microwave signal, a first power amplifier stage ( 11; 32 ) having an input coupled to receive the microwave signal, an impedance matching network ( 16; 39 ) coupled to an output of the first power amplifier stage, a second power amplifier stage ( 12; 33 ) having an input coupled to the impedance matching network, and an output for outputting the microwave signal after having been amplified by the first and second power amplifier stages, wherein the first power amplifier stage is optimized to be supplied with a first supply voltage ( 13; 35 ), which is essentially lower than a second supply voltage ( 14; 36 ), with which the second power amplifier stage is optimized to be supplied. Preferably, the second stage is an end stage based on an LDMOS transistor, and the first stage is a driver stage based on a bipolar transistor. |
