发明名称 PHYSICAL VAPOR DEPOSITION TARGETS, AND METHODS OF FABRICATING METALLIC MATERIALS
摘要 The invention includes a physical vapor deposition target composed of a face centered cubic unit cell metal or alloy and having a uniform grain size less than 30 microns, preferably less than 1 micron; and a uniform axial or planar <220> texture. Also described is a method for making sputtering targets. The method can comprise billet preparation; equal channel angular extrusion with a prescribed route and number of passes; and cross-rolling or forging subsequent to the equal channel angular extrusion.
申请公布号 EP1337682(A2) 申请公布日期 2003.08.27
申请号 EP20010991626 申请日期 2001.10.25
申请人 HONEYWELL INTERNATIONAL, INC. 发明人 SEGAL, VLADIMIR;FERRASSE, STEPHANE;ALFORD, FRANK
分类号 C22F1/04;C22C21/12;C22F1/00;C22F1/08;C23C14/34;H01J37/34;H01L21/285;(IPC1-7):C23C14/00 主分类号 C22F1/04
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