METHOD FOR FABRICATING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for fabricating a semiconductor device is provided to improve a refresh characteristic and guarantee yield-up by eliminating a pit in an active region on a substrate and by guaranteeing a stable physical structure and an excellent electrical characteristic. CONSTITUTION: An isolation region is formed on a semiconductor substrate(11) by a shallow trench isolation(STI). An insulation layer is formed on the resultant structure. An ion implantation process is performed. A rapid thermal annealing(RTA) process is performed. A key open photo/etching process is performed. The insulation layer is eliminated.