发明名称 SUBSTRATE VOLTAGE GENERATION CIRCUIT
摘要 PURPOSE: A substrate voltage generation circuit is provided to supply the substrate voltage to the low power system, safely. CONSTITUTION: A substrate voltage generation circuit includes a first and a second pumping devices(C3,30), a first and a second precharge devices(20,40) and a transfer transistor(PM4). The first pumping device(C3) supplies the pumping voltage to the node(N3) by receiving the first pulse signal(CP1). The first precharge device(20) receives the first pulse signal(CP1) and precharges the received the first pulse signal to the ground voltage. The second pumping device(30) receives the first pulse signal(CP1) and supplies the pumping voltage to the node(N5). The second precharge device(40) receives the second pulse signal(CP2) and precharges the node(N5) as the ground voltage. And, the transfer transistor(PM4) provided with a source terminal connected to the node and a drain terminal to output the substrate voltage(VBB) and a drain terminal connected to the node(N5) transfers the status of the node(N3) to the substrate.
申请公布号 KR20030069302(A) 申请公布日期 2003.08.27
申请号 KR20020008797 申请日期 2002.02.19
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 SIM, JAE YUN
分类号 G11C5/14;(IPC1-7):G11C5/14 主分类号 G11C5/14
代理机构 代理人
主权项
地址