| 摘要 |
<P>PROBLEM TO BE SOLVED: To form an element structure on a nitride semiconductor substrate having a flat surface in order to obtain an element using the substrate for a nitride semiconductor such as a blue light-emitting diode and a blue laser diode. <P>SOLUTION: A first nitride semiconductor having a film thickness of at least 20 μm or more is grown on a different kind of substrate 1 having a step- shaped off-angle having an off-angle of ≥0.05°. Thereby, step-shaped steps 21, 22 each having a terrace width of several hundred to several thousand micrometers are formed on the surface of the first nitride semiconductor. The terrace part 21 is very flat, and thereby, when the element structure is stacked on the terrace, a threshold current is reduced, and further the yield and the reliability of the element can be improved. Furthermore, when a laser element is manufactured, the direction of the steps is made in parallel with the direction of a resonator so that the formation of the element straddling the steps is prevented and at the same time, the yield is improved. <P>COPYRIGHT: (C)2003,JPO |
