| 发明名称 |
Optical semiconductor device |
| 摘要 |
The semiconductor laser has a substrate (1) with a lower layer (2) having an n type carrier structure. An active layer (4) forms a quantum well and an upper p type structure (6) is formed. The lower layer has a higher refraction index than the upper covering.
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| 申请公布号 |
EP1339144(A1) |
申请公布日期 |
2003.08.27 |
| 申请号 |
EP20020293002 |
申请日期 |
2002.12.05 |
| 申请人 |
AVANEX CORPORATION |
发明人 |
LOVISA, STEPHANE |
| 分类号 |
H01S5/02;H01S5/20;H01S5/22;H01S5/32;(IPC1-7):H01S5/22 |
主分类号 |
H01S5/02 |
| 代理机构 |
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代理人 |
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| 地址 |
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