METHOD FOR FABRICATING OPTICAL INTEGRATED CIRCUIT

摘要

PURPOSE: A method for fabricating an optical integrated circuit is provided to reduce the quantity of an etch byproduct and prevent an incomplete cleaving phenomenon by selectively wet-etching the second clad layer and by dry-etching the first clad layer, a core layer and a substrate. CONSTITUTION: An active device region and a passive device region are defined in a compound substrate(100). The core layer(105a,105b) and the first clad layer(110) are sequentially stacked on the compound substrate. An etch stopper(115) is formed on the first clad layer in the passive device region. A mask pattern for forming a waveguide is formed on the active device region and the passive device region. The passive device region is covered with the first passivation layer. A predetermined thickness of the first clad layer, the core layer and the compound substrate is etched to form an active device waveguide(130) by using the mask pattern in the exposed active device region. The first passivation layer is removed. The second clad layer is formed on the resultant structure. The active device region is covered with the second passivation layer. The second clad layer is wet-etched to expose the mask pattern in the passive device region. The etch stopper is wet-etched to have the type of the mask pattern in the passive device region. The first clad layer, the core layer and the compound substrate are dry-etched by a predetermined thickness to have the mask pattern in the passive device region so that an active device waveguide is formed.