Processing apparatus and method for cleaning this processing apparatus

摘要

The present invention relates to an impurity processing apparatus in which impurities such as phosphorus, born, or the like are doped on a semiconductor substrate, etc., or a PSG (PhosphoSilicateGlass) film, a BSG (BoroSilicateGlass) film, or a BPSG (BoroPhosphoSilicateGlass) film, or a carbon film, etc. is formed. This structure is characterized in that a chamber (11) comprises an introduction port of an impurity containing gas which is connected to an impurity containing gas supply part (102B), a substrate holder (12b) supporting a to-be-processed layer which is ion-injected, or doped, or on which a film is formed using the impurity containing gas, an introduction port of a water containing gas which is provided in an upstream of the substrate holder (12b) in accordance with a flow direction of the impurity containing gas, and is connected to a water containing gas supply part 102C, and first plasma generating means (12a, 12b, 16) which are provided in a space from the introduction port of the water containing gas to the substrate holder (12b), and plasmanizes the water containing gas.