| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a polishing composition for use in the CMP (chemical mechanical polishing) process of a semiconductor device having a copper film and a tantalum compound, that has high selectivity in which the polishing rate of copper is fast, but that of tantalum is low, and provides good smoothness also to the surface of the copper film. <P>SOLUTION: The polishing composition comprises an abrasive (A), carboxybenzotriazole (B), an organic acid (C), hydrogen peroxide (D) and water (E). The abrasive comprises at least one of fumed silica, colloidal silica, fumed alumina, and colloidal alumina. Primary particles of the abrasive have a particle size of 0.01-0.2μm and a concentration in the abrasive composition of 5-30 wt.%. The component (B) has a, concentration in the abrasive composition of 0.01-5 wt.%. <P>COPYRIGHT: (C)2003,JPO</p> |
