发明名称 GARNET SINGLE CRYSTAL SUBSTRATE AND METHOD OF PRODUCING THE SAME
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a garnet single crystal substrate having a large lattice constant, and a method of producing the same. <P>SOLUTION: The garnet single crystal substrate has a lattice constant of≥1.2501 and≤1.2510 nm and is expressed by compositional formula: Gd<SB>2.68+x</SB>Ca<SB>0.32</SB>Ga<SB>4.02-x</SB>Mg<SB>0.33</SB>Zr<SB>0.65</SB>O<SB>12</SB>(wherein, 0.03<x<0.15). The method of producing the garnet single crystal substrate comprises growing a crystal from a melt containing gadolinium oxide (Gd<SB>2</SB>O<SB>3</SB>), calcium oxide (CaO), gallium oxide (Ga<SB>2</SB>O<SB>3</SB>), magnesium oxide (MgO), and zirconium oxide (ZrO<SB>2</SB>) in following atomic ratios: Gd=2.68+x, Ca=0.32, Ga=4.02-x, Mg=0.33, and Zr=0.65 (wherein, 0.03<x<0.15), respectively, by using a seed crystal. <P>COPYRIGHT: (C)2003,JPO</p>
申请公布号 JP2003238295(A) 申请公布日期 2003.08.27
申请号 JP20020037649 申请日期 2002.02.15
申请人 HITACHI CHEM CO LTD 发明人 KURASHIGE KAZUHISA;ISHIBASHI HIROYUKI
分类号 G02F1/09;C30B29/28;(IPC1-7):C30B29/28 主分类号 G02F1/09
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