发明名称 |
Method of N2O annealing an oxide layer on a silicon carbide layer |
摘要 |
Methods for fabricating a layer of oxide on a silicon carbide layer are provided by forming the oxide layer on the silicon carbide layer and then annealing the oxide layer in an N2O environment at a predetermined temperature profile and at a predetermined flow rate profile of N2O. The predetermined temperature profile and the predetermined flow rate profile are selected so as to reduce interface states of the oxide/silicon carbide interface with energies near the conduction band of SiC.
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申请公布号 |
US6610366(B2) |
申请公布日期 |
2003.08.26 |
申请号 |
US20010834283 |
申请日期 |
2001.04.12 |
申请人 |
CREE, INC. |
发明人 |
LIPKIN LORI A. |
分类号 |
H01L21/04;H01L29/24;H01L29/78;(IPC1-7):B05D5/12;B05D3/04;B05D3/02 |
主分类号 |
H01L21/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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