| 摘要 |
A heterojunction bipolar transistor has a stack comprised of a base layer, an emitter layer and a ballast layer made of AlGaAs. The emitter layer is comprised of a single layer or a multiplicity of layers, and at least one of which is comprised of a material that prevents hole injection from the base layer into the ballast layer. Thus, the hole injection from the base layer into the emitter layer is prevented. Accordingly, it is able to prevent the conductivity modulation of the ballast layer that is the cause of a deterioration in temperature characteristics.
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