发明名称 |
Semiconductor device having a damascene type wiring layer |
摘要 |
A method of forming a cap film comprises a first polishing step of performing a polishing operation at selectivity of R1 (=removal rate for the cap film/removal rate for the insulating film), and a second polishing step of performing a polishing operation at selectivity of R2 (=removal rate for the cap film/removal rate for the insulating film). Each of the polishing operations is performed by using a slurry having the condition of R1>R2. By performing the polishing operations at different selectivity, the cap film free from problems such as dishing of the cap film and the residual cap film on side walls of a recess is formed. Consequently, a semiconductor device having an excellent RC characteristic can be provided.
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申请公布号 |
US6611060(B1) |
申请公布日期 |
2003.08.26 |
申请号 |
US20000677743 |
申请日期 |
2000.10.03 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
TOYODA HIROSHI;YANO HIROYUKI;MINAMIHABA GAKU;FUKUSHIMA DAI;MATSUDA TETSUO;KANEKO HISASHI |
分类号 |
H01L21/304;H01L21/3105;H01L21/321;H01L21/768;H01L23/522;H01L23/532;(IPC1-7):H01L23/52 |
主分类号 |
H01L21/304 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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