发明名称 Methods for selective removal of material from wafer alignment marks
摘要 A process and apparatus for locally removing any material, such as a refractory metal, in particular tungsten, from any desired area of a wafer, such as an alignment mark area of a silicon wafer in process during the formation of integrated circuits thereon.
申请公布号 US6610610(B2) 申请公布日期 2003.08.26
申请号 US20010944471 申请日期 2001.08.30
申请人 MICRON TECHNOLOGY, INC. 发明人 ZAHORIK RUSSELL C.;HUDSON GUY F.;STROUPE HUGH E.;DOBSON TODD A.;GORDON BRIAN F.
分类号 H01L21/00;H01L21/02;H01L21/306;H01L21/321;H01L21/3213;H01L23/544;(IPC1-7):H01L21/302 主分类号 H01L21/00
代理机构 代理人
主权项
地址