发明名称 Apparatus and method for improved power bus ESD protection
摘要 A number of different arrangements of island structures are utilized for improved ESD protection. The MOSFET structure provides islands that are selectively positioned among a group of ESD protection devices for protecting the power-bus, input pins, output pins and I/O pins to achieve ESD improvement in a manner which improves overall ESD protection strength while reducing the complexity of IC simulation and modeling.
申请公布号 US6611025(B2) 申请公布日期 2003.08.26
申请号 US20010946247 申请日期 2001.09.05
申请人 WINBOND ELECTRONICS CORP. 发明人 LIN SHI-TRON
分类号 H01L23/60;H01L27/02;(IPC1-7):H01L23/62 主分类号 H01L23/60
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