发明名称 |
Apparatus and method for improved power bus ESD protection |
摘要 |
A number of different arrangements of island structures are utilized for improved ESD protection. The MOSFET structure provides islands that are selectively positioned among a group of ESD protection devices for protecting the power-bus, input pins, output pins and I/O pins to achieve ESD improvement in a manner which improves overall ESD protection strength while reducing the complexity of IC simulation and modeling.
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申请公布号 |
US6611025(B2) |
申请公布日期 |
2003.08.26 |
申请号 |
US20010946247 |
申请日期 |
2001.09.05 |
申请人 |
WINBOND ELECTRONICS CORP. |
发明人 |
LIN SHI-TRON |
分类号 |
H01L23/60;H01L27/02;(IPC1-7):H01L23/62 |
主分类号 |
H01L23/60 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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