发明名称 |
Voltage-nonlinear resistor, method for making the same, and varistor using the same |
摘要 |
A varistor includes a voltage-nonlinear resistor and varistor electrodes provided on the upper and lower surfaces of the voltage-nonlinear resistor. The voltage-nonlinear resistor is primarily composed of SiC (silicon carbide) particles which are doped with at least one dopant such as N (nitrogen) and P (phosphorus). The varistor electrodes are composed of a metal, e.g., Ag, Pd, Pt, Al, Ni or Cu. The SiC particles of the voltage-nonlinear resistor further contain at least one element of Al (aluminum) and B (boron) in an amount of about 0.01 to 100 parts by weight with respect to 100 parts by weight of the SiC particles.
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申请公布号 |
US6611192(B1) |
申请公布日期 |
2003.08.26 |
申请号 |
US20000708155 |
申请日期 |
2000.11.08 |
申请人 |
MURATA MANUFACTURING CO., LTD. |
发明人 |
KAMOSHIDA YUKIHIRO;NAKAMURA KAZUTAKA |
分类号 |
H01C7/10;H01C7/118;(IPC1-7):H01C7/13 |
主分类号 |
H01C7/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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