发明名称 |
Method of annealing large area glass substrates |
摘要 |
A thin film layer can be formed on a glass substrate by preheating the substrate, depositing an amorphous silicon precursor layer on the substrate at a first temperature, and annealing the substrate in a thermal processing chamber at a second temperature sufficiently higher than the first temperature to substantially reduce the hydrogen concentration in the precursor layer. The preheating and annealing steps can occur in the same thermal processing chamber. Then the precursor layer is converted to a polycrystaline silicon layer by laser annealing.
|
申请公布号 |
US6610374(B2) |
申请公布日期 |
2003.08.26 |
申请号 |
US20010954797 |
申请日期 |
2001.09.10 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
TSAI CHUANG-CHUANG;TAKEHARA TAKAKO;QIU REGINA;LEGRICE YVONNE;HARSHBARGER WILLIAM REID;ROBERTSON ROBERT MCCORMICK |
分类号 |
C03C17/22;C23C16/02;C23C16/24;C23C16/56;H01L21/20;H01L21/205;H01L21/336;H01L29/786;(IPC1-7):B05D3/06;B05D3/02;C23C16/00 |
主分类号 |
C03C17/22 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|