| 摘要 |
PURPOSE: A method for fabricating a gate electrode of a semiconductor device is provided to increase crystallinity and remarkably improve a characteristic in a high frequency device by growing silicon on a silicon oxide layer such that the silicon has a characteristic similar to single crystal. CONSTITUTION: A gate oxide layer(22) is formed on a semiconductor substrate(20) by wet oxidation or dry oxidation. A low temperature polysilicon buffer layer(24) of an amorphous state is formed on the gate oxide layer. A high temperature polysilicon layer(26) having improved crystallinity is formed on the polysilicon buffer layer. The gate oxide layer, the polysilicon buffer layer and the polysilicon layer are patterned and an etch process is performed to form a gate electrode(28).
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