| 摘要 |
PURPOSE: A method for fabricating a semiconductor device is provided to obtain a characteristic of a designed semiconductor device by preventing a leakage current between conductive layer patterns in a driving condition of high temperature and high current, and to prevent a hillock by forming an insulation of high intensity on the sidewall of the conductive layer pattern. CONSTITUTION: An interconnection layer is formed on a substrate(20) or an underlying layer and is patterned. The first oxide layer(30) is formed on the patterned interconnection layer. The first oxide layer is blanket-etched so that the etch layer covers the sidewall of the interconnection layer. The second oxide layer(32) of a low dielectric constant is deposited on the entire resultant structure.
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