CHEMICAL MECHANICAL POLISHING APPARATUS AND CONTROLLING METHOD THEREOF

摘要

PURPOSE: A chemical mechanical polishing(CMP) apparatus is provided to perform a CMP process on a micro structure by using ordinary diamond slurry including silicon particles that are used as slurry generated by a CMP process performed on a semiconductor wafer. CONSTITUTION: A process setting up unit(36) provides a function of setting up a process condition and a process order for performing a CMP process on the micro structure. A control unit(35) outputs a process control signal for controlling the entire system according to the process condition and the process order set up by the process setting up unit. A carrier driving unit(37) rotates a carrier according to the process control signal. A plate driving unit(38) rotates a plate attached to a polishing pad according to the process control signal to move the polishing pad regarding the carrier. A used slurry supply unit(34) consecutively supplies the slurry including the silicon particles to the upper portion of the polishing pad according to the process control signal.