发明名称 SEMICONDUCTOR MEMORY DEVICE PROVIDED WITH DELAY LOCK LOOP FOR PREVENTING THE CHARACTERISTICS DETERIORATION DUE TO POWER SUPPLY NOISE
摘要 <p>PURPOSE: A semiconductor memory device provided with a delay lock loop(DLL) for preventing the characteristics deterioration due to the power supply noise are provided to improve the characteristics of the DLL by preventing the peripheral circuits configuring the DLL due to the power loss and noise generated at the data output path of the semiconductor memory device. CONSTITUTION: A semiconductor memory device includes a pair of delay lock loops(DLL)(400,440) and a data output path(200). And, the semiconductor memory device further includes a commercial power pad(470), a variable delay line power pad(480) and a peripheral circuit power pad(490). The data output path(200) receives the data(DOUT) to be outputted to the outside by reading from the internal clock(IN_CLK) and a memory cell to output the received data(DOUT) through the data pin with synchronizing with the internal clock(IN_CLK). The pair of DLLs(400,440) receives the external clock(EXT_CLK) inputted from the outside and generates the inner clock(IN_CLK). The data(DOUT) is outputted to the outside through the data pin with synchronizing to the internal clock(IN_CLK).</p>
申请公布号 KR20030068829(A) 申请公布日期 2003.08.25
申请号 KR20020008474 申请日期 2002.02.18
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 JUNG, DAE HYEON;LIM, HYEON UK
分类号 G11C7/22;G11C8/00;G11C11/401;G11C11/407;G11C11/4074;G11C11/4076;H03K5/13;H03L7/00;(IPC1-7):G11C8/00 主分类号 G11C7/22
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