发明名称 ATMOSPHERIC PRESSURE CHEMICAL VAPOR DEPOSITION EQUIPMENT
摘要 PURPOSE: Atmospheric pressure chemical vapor deposition(APCVD) equipment is provided to minimize a defect ratio and prevent the waste of a flowable oxide(FOX) solution by forming a scale for checking the quantity of a residual FOX solution in a storing receptacle. CONSTITUTION: A thin film is formed on a wafer by using a predetermined chemical solution(160). A wafer chuck(120) on which the wafer is placed is installed inside a reaction chamber(110). The chemical solution that will be supplied to the reaction chamber is stored in the storing receptacle(150). The scale(170) for checking the quantity of a residual chemical solution is formed on the surface of the storing receptacle to determine the quantity of the residual chemical solution. One end of a supply pipe(130) is connected to the storing receptacle and the other end of the supply pipe is connected to the reaction chamber so that the chemical solution stored in the storing receptacle is supplied to the inside of the reaction chamber.
申请公布号 KR20030068648(A) 申请公布日期 2003.08.25
申请号 KR20020008132 申请日期 2002.02.15
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 CHOI, JUN U
分类号 H01L21/205;(IPC1-7):H01L21/205 主分类号 H01L21/205
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