CLEANING GAS AND ETCHING GAS

摘要

PROBLEM TO BE SOLVED: To obtain chamber cleaning gas and etching gas for a silicon containing film each containing perfluorocyclic ether having not less than two and not more than four oxygen atoms ether bonded to a carbon atom.

SOLUTION: The chamber cleaning gas and the etching gas for a silicon containing film are environmentally friend because they do not produce exhaust gas harmful to the environment, i.e., CF4, causing global warming. They are easy-to-handle nontoxic gas or volatile liquid and exhibit excellent exhaust gas treatment performance. The chamber cleaning gas also exhibits an excellent cleaning rate.

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