METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To obtain a method for manufacturing a semiconductor device which exhibits sufficient stopping power from a low backward bias region or regenerates uniform voltage amplification factor from the low backward bias region, regenerates uniform voltage amplification factor in a wide range region, and is excellent in linearity. SOLUTION: In the method for manufacturing a semiconductor device, an epitaxial growth layer 21 is formed on a surface of a conductive silicon substrate 1, a source region 5 having the same conductive silicon substrate 1 and a gate region 4 having a reverse conductivity to the silicon substrate 1 are formed, and a drain region having the same conductivity with the silicon substrate is formed on a back of the silicon substrate 1. In the method, density of impurities of the epitaxial growth layer 21 is made at most 1014cm-3, and a width Woof a depletion layer in the case of zero bias is made large, thereby obtaining the semiconductor device which can exhibit uniform stopping power or regenerate uniform voltage amplification factor from a low bias region to a high bias region. COPYRIGHT: (C)2003,JPO