| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor light receiving element having a structure capable of reducing fluctuation of element characteristic and manufacturing yield, and to provide a method for manufacturing the semiconductor light receiving element. SOLUTION: This semiconductor light receiving element 1a has a planar type structure and is provided with an electrode surface 2a, a substrate 4, a light absorbing layer 18, a p-type semiconductor region 22 and an n-type semiconductor region 24. An anode electrode 10 and a cathode electrode 12 are arranged on the electrode surface 2a. The light absorbing layer 18 is arranged between the electrode surface 2a and the substrate 4, and contains III-V compound semiconductor 20. A p-type semiconductor region 22 is connected with the anode electrode 10 and arranged so as to reach the light absorbing layer 18 from the electrode surface 2a. The n-type semiconductor region 24 is connected with the cathode electrode 12 and arranged so as to reach the light absorbing layer 18 from the electrode surface 2a. COPYRIGHT: (C)2003,JPO
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