| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device in which depletion of a gate electrode of a PMOSFET is restrained, and a method for manufacturing it, related to a semiconductor device comprising a polymetal gate structure of a dual gate. <P>SOLUTION: A first transistor 36b comprises a first gate electrode 20b that contains a p-type polysilicon film 22b and is formed over a semiconductor substrate 10 with a gate insulation film 18 in between, and a first cap film 28b that is formed on the first gate electrode. A second transistor 36a comprises a second gate electrode 20a that contains an n-type polysilicon film 22a and is formed over the semiconductor substrate with the gate insulation film in between, and a second cap film 28a that is formed on the second gate electrode. A thickness of the first cap film is thinner than that of the second cap film. A force applied from the first cap film to the gate insulation film below the film is smaller than that applied from the second cap film to the gate insulation film below the film. <P>COPYRIGHT: (C)2003,JPO |
