| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method for improving integration degree and power saving of a nonvolatile magnetic memory utilizing a ferromagnetic film. <P>SOLUTION: When an electrode layer, a piezoelectric layer, and a magnetic layer are arranged and an electric field is secured by applying voltage to the electrode layer, after lattice expansion (or lattice compression) is excited in the piezoelectric layer, a magnetization easy axis affecting the self-magnetization direction of the magnetic layer is switched vertically or inversely to a film surface by applying tension stress or compression stress to the magnetic layer. Information can be recorded without applying a magnetic field by a magnetic memory utilizing the above, when a ultrahigh-density nonvolatile memory element is formed, size of a memory cell is made small, interval between cells is narrowed, and an effect is obtained such that information loss and reliability loss at recording information can be suppressed. <P>COPYRIGHT: (C)2003,JPO</p> |
