| 摘要 |
PROBLEM TO BE SOLVED: To form a light radiating end face of a semiconductor light emitting element using a nitride system III-V group compound semiconductor with cleavage without use of expensive substrate such as SiC substrate and lead the electrode from upper and lower surfaces without causing any trouble. SOLUTION: After a laser structure is formed with sequential growth of n type layer, active layer, and p type layer on the C surface sapphire substrate, a metal film 30 is formed on the upper most p type layer 29. A metal film 32 is formed on a p type GaP substrate 31 of the (100) surface alignment. After the p type layer 29 and the p type GaP substrate 31 on the C surface sapphire substrate are joined via the metal films 30, 32 to provide matching in the easier cleavage direction, the C surface sapphire substrate is removed. After a current pinching layer 33 is partially formed to the exposed n type layers 23, 24, the p type GaP substrate 31 is cleavaged along the easier cleavage direction. Thereby, the n type layer, active layer and p type layer are cleavaged to form a resonator end face. COPYRIGHT: (C)2003,JPO
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