| 摘要 |
<P>PROBLEM TO BE SOLVED: To develop a semiconductor device that is equipped with a transition section having an electric series resistance as small as possible between a semiconductor body and a substrate. <P>SOLUTION: In the semiconductor device, a conductive substrate (1) and a semiconductor body (3) are provided, and the semiconductor body (3) has at least one nitride-compound semiconductor and at the same time is arranged on the surface of the substrate (1). In this case, a conductive mask layer (2) having a specific mask structure for reducing the series resistance in the semiconductor device is arranged between the substrate (1) and the semiconductor body (3), and the surface of the substrate (1) is partially covered with the mask layer. <P>COPYRIGHT: (C)2003,JPO |
