| 发明名称 |
SEMICONDUCTOR MULTILAYER FILM, SEMICONDUCTOR ELEMENT USING THE FILM, AND MANUFACTURING METHOD THEREOF |
| 摘要 |
PROBLEM TO BE SOLVED: To provide a technology for preventing the contamination and impurity originating from a mask from being entrapped in the semiconductor layer formed by the growth of the mask, and for obtaining with manufacturing stability the semiconductor multilayer film having a desired performance. SOLUTION: In the technology, a mask 9 is made of Al<SB>2</SB>O<SB>3</SB>, which is used when forming a p-type Al<SB>0.07</SB>Ga<SB>0.8</SB>N clad layer 10. COPYRIGHT: (C)2003,JPO
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| 申请公布号 |
JP2003234546(A) |
申请公布日期 |
2003.08.22 |
| 申请号 |
JP20020031557 |
申请日期 |
2002.02.07 |
| 申请人 |
NEC CORP |
发明人 |
KAZETAGAWA MUNEYUKI;KURAMOTO MASARU;SASAOKA CHIAKI |
| 分类号 |
H01L21/205;H01S5/323;H01S5/343;(IPC1-7):H01S5/343 |
主分类号 |
H01L21/205 |
| 代理机构 |
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