发明名称 METHOD FOR FABRICATING SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To solve a problem that the fabrication process is increased when the insulation film in a scribe line region is removed after forming an on-chip lens because a removing step is required. SOLUTION: In the fabrication of a CCD imaging device, occurrence of uneven coating is suppressed at the time of forming a color filter layer 24 or an on-chip lens 25 on a planarization layer 23 by forming the planarization layer 23 while leaving a first layer conductive film 14 and a second layer conductive film 17 in a scribe line region 13. On the other hand, the conductive films 14 and 17 on the scribe line region 13 are left as they are and scribed together during dicing process thus eliminating the step for removing the conductive films. COPYRIGHT: (C)2003,JPO
申请公布号 JP2003234465(A) 申请公布日期 2003.08.22
申请号 JP20020029107 申请日期 2002.02.06
申请人 SONY CORP 发明人 OKADA MASAYUKI;SUGIMOTO MASARU
分类号 H01L27/148;H04N5/335;H04N5/369;(IPC1-7):H01L27/148 主分类号 H01L27/148
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