| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of forming a SiON film which has a profile for nitrogen composition in which nitrogen concentration becomes high in the vicinity of a gate electrode and low in the side of a substrate by plasma-nitride- processing a SiO<SB>2</SB>film. SOLUTION: The method of forming this SiON film uses a nitride processing device which is provided with a source RF supply source which supplies high-frequency electric power for exciting plasma which contains nitrogen (hereinafter, referred to as a source RF), and a bias RF supply source which applies high-frequency electric power to the substrate (hereinafter, referred to as a bias RF), applies the bias RF to the substrate, and further increases the incident energy and the incident flux of an ion which enters the SiO<SB>2</SB>film on the substrate, compared with applying only the source RF to the substrate. Thereby, the bonding of Si-O in the surface of the SiO<SB>2</SB>film is severed, to increase the number of Si dangling bonds and accelerate the bonding of Si-N. It is possible to shorten the time required to form the nitride film and increase the nitride concentration of the surface of the SiO<SB>2</SB>film. COPYRIGHT: (C)2003,JPO
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