| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device capable of reducing the concentration of stress to a trench corner without increasing cost using a simple method. SOLUTION: A groove 6 is formed at a semiconductor substrate 1, and thereafter the semiconductor substrate 1 is heat-treated in an atmosphere which is higher than or equal to 800°C and in which the component of oxidizing gas is 10 ppb or lower, to round off corners 6a and 6b of the groove. COPYRIGHT: (C)2003,JPO
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